ENEOS. has filed a patent for a sputtering target with a unique composition. The target includes Al, Cu, and Mg in specific configurations to enhance performance. The design features an alloy layer with a high Mg content for improved functionality in various applications. GlobalData’s report on ENEOS gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on ENEOS, Hydrocarbon redistribution reaction catalysts was a key innovation area identified from patents. ENEOS's grant share as of January 2024 was 32%. Grant share is based on the ratio of number of grants to total number of patents.
Sputtering target with al, cu, and mg alloy layer
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A sputtering target patent (Publication Number: US20240026525A1) discloses a unique design comprising a plurality of members, including a target material and a base material. The target consists of a first member with Al and a second member with Cu, with at least one member containing Mg. An alloy layer containing Al and Cu, along with an Mg-containing layer with 5.0 at % or more of Mg, is present between the first and second members. The bonding strength between the members is specified to be 5 kgf/mm2 or more, with the alloy layer having varying Al and Cu content based on its contact with the first and second members.
Furthermore, the patent details a method for producing the sputtering target, involving a preparation step of laminating the first and second members and a bonding step under pressure, potentially using hot isostatic pressing. The target material may contain Ti, and the bonding process can involve diffusion bonding. The method also includes the use of an insert material in addition to the target and base materials, with the first member being either the insert material or the base material, and the second member being the other. The preparation step involves the preparation of the target, insert, and base materials before the bonding process, ensuring a specific composition and structure for the resulting sputtering target.
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