SK. has been granted a patent for a single crystal ingot growth control device. This device features an input unit for diameter error measurement, a calculation unit for real-time integral calculations to determine pulling speed, and an output unit to communicate this speed to a pulling controller. GlobalData’s report on SK gives a 360-degree view of the company including its patenting strategy. Buy the report here.
According to GlobalData’s company profile on SK, UAV battery thermal mgmt was a key innovation area identified from patents. SK's grant share as of June 2024 was 48%. Grant share is based on the ratio of number of grants to total number of patents.
Single crystal ingot growth control device
The patent US12043917B2 describes a sophisticated single crystal ingot growth apparatus designed to enhance the precision of ingot production. Central to this apparatus is a growth control device that includes an input unit for receiving diameter error data, which represents the difference between the actual and target diameters of the ingot. The device features a calculation unit that performs real-time integral calculations on this diameter error to determine a final pulling speed for the ingot. This speed is adjusted stepwise based on the integral value of the diameter error, with specific protocols for both positive and negative fluctuations. The output unit then communicates the calculated pulling speed to a pulling controller, ensuring that adjustments are made in accordance with the measured errors.
Additionally, the apparatus incorporates mechanisms for temperature correction and further error calculations. The calculation unit can derive a first pulling speed error based on the diameter error and selected set time, and it can also compute a corrected pulling speed by inversely reflecting the target pulling speed according to a predetermined ratio. The system is designed to continuously output both the final and corrected pulling speeds to the pulling controller. Furthermore, the apparatus includes a chamber for a crucible containing silicon melt, a pulling system for ingot growth, a heater for maintaining temperature, and a diameter measuring sensor to monitor the ingot's dimensions. This comprehensive setup aims to improve the quality and consistency of single crystal ingots, which are critical in various high-tech applications.
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